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Electronic Devices & Semiconductor

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Q 1. If the lattice constant of this semiconductor is decreased, then which of the following is correct?

all {tex} E _ { c } , E _ { g } , E _ { v } {/tex} decrease

all {tex} E _ { c } , E _ { g } , E _ { v } {/tex} increase

{tex} E _ { c } , {/tex} and {tex} E _ { v } {/tex} increase, but {tex} E _ { g } {/tex} decreases

{tex} E _ { c } , {/tex} and {tex} E _ { v } {/tex} decrease, but {tex} E _ { g } {/tex} increases.

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Q 2. At absolute zero, Si acts as

non-metal

metal

insulator

none of these.

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Q 3. By increasing the temperature, the specific resistance of a conductor and a semiconductor

increases for both

decreases for both

increases, decreases

decreases, increases.

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Q 4. The energy band gap is maximum in

metals

superconductors

insulators

semiconductors.

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Q 5. The part of a transistor which is most heavily doped to produce large number of majority carriers is

emitter

base

collector

can be any of the above three.

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Q 6. Formation of covalent bonds in compounds exhibits

wave nature of electron

particle nature of electron

both wave and particle nature of electron

none of these.

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Q 7. The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

crystal structure

variation of the number of charge carriers with temperature

type of bonding

variation of scattering mechanism with temperature.

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Q 8. For a transistor amplifier in common emitter configuration for load impedance of {tex} 1 \mathrm { k } \Omega {/tex} {tex} \left( h _ { f e } = 50 \text { and } h _ { o e } = 25 \right) {/tex} the current gain is

{tex} - 5.2 {/tex}

{tex} - 15.7 {/tex}

{tex} - 24.8 {/tex}

{tex} - 48.78 {/tex}

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Q 9. A n-type semiconductor is

negatively charged

positively charged

neutral

none of these

n-type semiconductors are neutral because neutral atoms are added during doping

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Q 10. The manifestation of band structure in solids is due to

Heisenberg's uncertainty principle

Pauli's exclusion principle

Bohr's correspondence principle

Boltzmann's law

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Q 11. When {tex} p - n {/tex} junction diode is forward biased, then

the depletion region is reduced and barrier height is increased

the depletion region is widened and barrier height is reduced.

both the depletion region and barrier height are reduced

both the depletion region and barrier height are increased

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