Correct Marks 4
Incorrectly Marks -1
Q 1. If the lattice constant of this semiconductor is decreased, then which of the following is correct?
all {tex} E _ { c } , E _ { g } , E _ { v } {/tex} decrease
all {tex} E _ { c } , E _ { g } , E _ { v } {/tex} increase
{tex} E _ { c } , {/tex} and {tex} E _ { v } {/tex} increase, but {tex} E _ { g } {/tex} decreases
{tex} E _ { c } , {/tex} and {tex} E _ { v } {/tex} decrease, but {tex} E _ { g } {/tex} increases.
Correct Marks 4
Incorrectly Marks -1
Q 2. At absolute zero, Si acts as
non-metal
metal
insulator
none of these.
Correct Marks 4
Incorrectly Marks -1
Q 3. By increasing the temperature, the specific resistance of a conductor and a semiconductor
increases for both
decreases for both
increases, decreases
decreases, increases.
Correct Marks 4
Incorrectly Marks -1
Q 4. The energy band gap is maximum in
metals
superconductors
insulators
semiconductors.
Correct Marks 4
Incorrectly Marks -1
Q 5. The part of a transistor which is most heavily doped to produce large number of majority carriers is
emitter
base
collector
can be any of the above three.
Correct Marks 4
Incorrectly Marks -1
Q 6. Formation of covalent bonds in compounds exhibits
wave nature of electron
particle nature of electron
both wave and particle nature of electron
none of these.
Correct Marks 4
Incorrectly Marks -1
Q 7. The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
crystal structure
variation of the number of charge carriers with temperature
type of bonding
variation of scattering mechanism with temperature.
Correct Marks 4
Incorrectly Marks -1
Q 8. For a transistor amplifier in common emitter configuration for load impedance of {tex} 1 \mathrm { k } \Omega {/tex} {tex} \left( h _ { f e } = 50 \text { and } h _ { o e } = 25 \right) {/tex} the current gain is
{tex} - 5.2 {/tex}
{tex} - 15.7 {/tex}
{tex} - 24.8 {/tex}
{tex} - 48.78 {/tex}
Correct Marks 4
Incorrectly Marks -1
Q 9. A n-type semiconductor is
negatively charged
positively charged
neutral
none of these
n-type semiconductors are neutral because neutral atoms are added during doping
Correct Marks 4
Incorrectly Marks -1
Q 10. The manifestation of band structure in solids is due to
Heisenberg's uncertainty principle
Pauli's exclusion principle
Bohr's correspondence principle
Boltzmann's law
Correct Marks 4
Incorrectly Marks -1
Q 11. When {tex} p - n {/tex} junction diode is forward biased, then
the depletion region is reduced and barrier height is increased
the depletion region is widened and barrier height is reduced.
both the depletion region and barrier height are reduced
both the depletion region and barrier height are increased
