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Electronic Devices & Semiconductor

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Q 1. In the middle of the depletion layer of a reverse- biased {tex} p - n {/tex} junction, the

electric field is zero

potential is maximum

electric field is maximum

potential is zero.

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Q 2. In the circuit below, {tex} A {/tex} and {tex} B {/tex} represent two inputs and {tex} C {/tex} represents the output. The circuit represents

OR gate

NOR gate

AND gate

NAND gate

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Q 3. If in a {tex} p - n {/tex} junction diode, a square input signal of {tex} 10 \mathrm { V } {/tex} is applied as shown

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Q 4. In a full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be

100 {tex} \mathrm { Hz } {/tex}

70.7 {tex} \mathrm { Hz } {/tex}

50 {tex} \mathrm { Hz } {/tex}

25 {tex}\mathrm { Hz } {/tex}

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Q 5. In common base mode of a transistor, the collector current is {tex} 5.488 \mathrm { mA } {/tex} for an emitter current of {tex} 5.60 \mathrm { mA } {/tex}. The value of the base current amplification factor ( {tex} \beta {/tex} ) will be

48

49

50

51

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Q 6. The circuit has two oppositely connect ideal diodes in parallel. What is the current following in the circuit?

{tex} 1.71 \mathrm { A } {/tex}

{tex} 2.00 \mathrm { A } {/tex}

{tex} 2.31 \mathrm { A } {/tex}

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Q 7. A solid which is transparent to visible light and whose conductivity increases with temperature is formed by

metallic binding

ionic binding

covalent binding

van der Waals binding

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Q 8. In the ratio of the concentration of electrons that of holes in a semiconductor is {tex} 7 / 5 {/tex} and the ratio of currents is {tex} 7 / 4 {/tex} then what is the ratio of their drift velocities?

{tex} 4 / 7 {/tex}

{tex} 5 / 8 {/tex}

{tex} 4 / 5 {/tex}

{tex} 5/4 {/tex}

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Q 9. The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than {tex} 2480 \mathrm { nm } {/tex} is incident on it. The band gap in (eV) for the semiconductor is

0.5 {tex} \mathrm { eV } {/tex}

0.7 {tex} \mathrm { eV } {/tex}

1.1 {tex}\mathrm { eV } {/tex}

2.5 {tex} \mathrm { eV } {/tex}

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Q 10. A working transistor with its three legs marked {tex} P , {/tex} {tex} Q {/tex} and {tex} R {/tex} is tested using a multimeter. No conduction is found between {tex} P {/tex} and {tex} Q . {/tex} By connecting the common (negative) terminal of the multimeter to {tex} R {/tex} and the other (positive) terminal to {tex} P {/tex} or {tex} Q {/tex}, some resistance is seen on the multimeter. Which of the following is true for the transistor?

It is an npn transistor with {tex} R {/tex} as collector.

It is an npn transistor with {tex} R {/tex} as base.

It is a pnp transistor with {tex} R {/tex} as collector.

It is a pnp transistor with {tex} R {/tex} as emitter.

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Q 11. In a common base amplifier, the phase difference between the input signal voltage and output voltage is

0

{tex} \pi / 2 {/tex}

{tex} \pi / 4 {/tex}

{tex} \pi {/tex}

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Q 12. In the following, which one of the diodes is reverse biased?

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Q 13. When npn transistor is used as an amplifier

electrons move from base to collector

holes move from emitter to base

electrons move from collector to base

holes move from base to emitter.

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Q 14. In a common base amplifier the phase difference between the input signal voltage and the output voltage is

0

{tex} \pi / 4 {/tex}

{tex} \pi / 2 {/tex}

{tex} \pi {/tex}

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Q 15. For the given combination of gates, if the logic states of inputs {tex} A , B , {/tex} {tex} C {/tex} are as follows {tex} A = B = C = 0 {/tex} and {tex} A = B = 1 , C = 0 {/tex} then the logic states of output {tex} D {/tex} are

{tex} 0,0 {/tex}

{tex} 0,1 {/tex}

{tex} 1,0 {/tex}

{tex} 1,1 {/tex}

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Q 16. While a collector to emitter voltage is constant in a transistor, the collector current changes by {tex} 8.2 \ { mA } {/tex} when the emitter current changes by {tex} 8.3 \ { m } A {/tex}. The value of forward current ratio {tex} h {/tex} is

{tex}82{/tex}

{tex}83{/tex}

{tex}8.2{/tex}

{tex}8.3{/tex}

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Q 17. The output of a {tex}NAND{/tex} gate is 0

If both inputs are 0

If one input is 0 and the other input is 1

If both inputs are 1

Either if both inputs are 1 or if one of the inputs is 1 and the other 0

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Q 18. A semiconductor {tex}X{/tex} is made by doping a germanium crystal with arsenic {tex} (Z = 33){/tex}. A second semiconductor {tex}Y{/tex} is made by doping germanium with indium {tex} (Z = 49){/tex}. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct

{tex} X {/tex}is {tex} P {/tex}-type, {tex} Y {/tex}is {tex} N {/tex}-type and the junction is forward biased

{tex} X {/tex}is {tex} N {/tex}-type, {tex} Y {/tex}is {tex} P {/tex}-type and the junction is forward biased

{tex} X {/tex}is {tex} P {/tex}-type, {tex} Y {/tex}is {tex} N {/tex}-type and the junction is reverse biased

{tex} X {/tex}is {tex} N {/tex}-type, {tex} Y {/tex}is {tex} P {/tex}-type and the junction is reverse biased

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Q 19. In a {tex}PNP{/tex} transistor the base is the {tex} N {/tex}-region. Its width relative to the {tex}P{/tex}-region is

Smaller

Larger

Same

Not related

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Q 20. The combination of gates shown be a process

{tex}\mathrm {AND}{/tex} gate

{tex}\mathrm{XOR}{/tex} gate

{tex}\mathrm{NOR}{/tex} gate

{tex}\mathrm{NAND}{/tex} gate

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Q 21. A common emitter amplifier is designed with {tex} N P N {/tex} transistor {tex} ( \alpha = {/tex} {tex} 0.99 ) . {/tex} The input impedance is {tex} 1\ { K } \Omega {/tex} and load is {tex} 10\ { K } \Omega {/tex}. The voltage gain will be

{tex}9.9{/tex}

{tex}99{/tex}

{tex}990{/tex}

{tex}9900{/tex}

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Q 22. The relation between {tex} \alpha {/tex} and {tex} \beta {/tex} parameters of current gains for a transistors is given by

{tex} \alpha = \frac { \beta } { 1 - \beta } {/tex}

{tex} \alpha = \frac { \beta } { 1 + \beta } {/tex}

{tex} \alpha = \frac { 1 - \beta } { \beta } {/tex}

{tex} \alpha = \frac { 1 + \beta } { \beta } {/tex}

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Q 23. A gate in which all the inputs must be low to get a high output is called

A {tex}\mathrm{NAND}{/tex} gate

An Invertor{tex} {/tex}

A {tex}\mathrm{NOR}{/tex} gate

An {tex}\mathrm{AND}{/tex} gate

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Q 24. The {tex} i - V {/tex} characteristic of a {tex} P - N {/tex} junction diode is shown below. The approximate dynamic resistance of the {tex}P-N{/tex} junction when a forward bias of {tex}2{/tex} {tex}volt{/tex} is applied

{tex} 1\ \Omega {/tex}

{tex} 0.25\ \Omega {/tex}

{tex} 0.5\ \Omega {/tex}

{tex} 5\ \Omega {/tex}

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Q 25. On increasing the reverse bias to a large value in a {tex} P N- {/tex}junction diode, current

Increases slowly

Remains fixed

Suddenly increases

Only fixed ions

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